Design & Reuse
Catalog of SIP Cores
System on Chip design resources
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arrow Embedded Memories (996)
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996 IP
101
11.0
NVM OTP NeoBit in SHARP (180nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
102
11.0
NVM OTP NeoBit in Silterra (180nm, 160nm, 130nm, 110nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
103
11.0
NVM OTP NeoBit in SKHYNIX (180nm, 130nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
104
11.0
NVM OTP NeoBit in SMIC (350nm, 180nm, 160nm, 130nm, 110nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
105
11.0
NVM OTP NeoBit in TSMC (350nm, 250nm, 180nm, 160nm, 130nm, 110nm, 90nm, 80nm, 55nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
106
11.0
NVM OTP NeoBit in UMC (180nm, 160nm, 130nm, 110nm, 80nm, 55nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
107
11.0
NVM OTP NeoBit in Vanguard (350nm, 250nm, 180nm, 160nm, 150nm, 110nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
108
11.0
NVM OTP NeoBit in X-FAB (250nm)
eMemory's NeoBit OTP (One-Time Programmable) IP can be implemented seamlessly in various CMOS technologies such as logic, mixed-mode, analog, Radio-Fr...
109
10.0
64x8 Bits OTP (One-Time Programmable) IP, UM- 55nm ULP standard CMOS core logic Process
The AT64X8U55ULP6AA is organized as a 64-word by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 55nm ULP standard ...
110
10.0
64x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO00064X8XH180TG33NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...
111
10.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 22ULP 0.8V/1.8V process
The AT256X8T22ULP6AA is organized as 256 bits by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 22nm ULP CMOS...
112
10.0
768x39 Bits OTP (One-Time Programmable) IP, TSM- 55ULP 0.9V–1.2V / 2.5V Process
The ATO0768X39TS055ULP4NA is organized as 768x39 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 55nm LP 1.2V/2....
113
10.0
16Kx33 Bits OTP (One-Time Programmable) IP, TSM- 40LP 1.1V/2.5V Process
The ATO016KX33TS040LLP7ZA is organized as 16K-bits by 33 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ...
114
10.0
4Kx16 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT4K16U110MAE0DA is organized as a 4K-bits by 16 one-time programmable memory. This is a kind of non-volatile memory fabricated in UM- L110AE proc...
115
10.0
4Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40nm ULP 1.1V/2.5V Process
The AT4K32T40ULP7ZC is organized as 4K-bits by 32 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP stand...
116
10.0
4Kx8 Bits OTP (One-Time Programmable) IP, GLOBA-FOUNDR---® 22nm FDX 0.8V/1.8V Process
The AT4K8G22FDX0AA is organized as a 4K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in GLOBA-FOUNDR---® ...
117
10.0
8Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT8K8V150BCD0DB is organized as an 8K-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 0.15μm BCD GII...
118
10.0
On-chip memory expansion
The Cache MX IP compresses on-chip L2, L3 SRAM cache enabling 2x effective capacity. SRAM Caches can take upto 30-50% of an SoC xPU silicon real estat...
119
10.0
1x64 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 22nmFDX 0.8V/1.8V Process
The AT1X64G22FDX0AA is organized as a 1 by 64 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in Globa-Foundr--- 22nm FD...
120
8.0
Zero Additional Mask MTP
LEE Flash ZT (ZT) achieves automotive grade temperature and quality grade. Perfect fit for trimming and parameter storage in Sensor, Power and Analog...
121
8.0
Next Generation Flash device enabling small size, low power and direct connection with digital circuit which opens up new possibiities
LEE Flash G2 (G2) is an innovative Flash IP offering unique features that no other Flash IP could offer. It is based on LEE Flash G1, which consists ...
122
8.0
IGMDLSX01A, TSMC CLN7FF High Speed Dual Port SRAM
IGMDLSX01A, TSMC CLN7FF High Speed Dual Port SRAM...
123
8.0
IGMSLSX01A, TSMC CLN7FF Low Power High Speed Single Port SRAM
IGMSLSX01A, TSMC CLN7FF Low Power High Speed Single Port SRAM...
124
8.0
Embedded flash IP, 1.32V/3V PSMC 90nm
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm and supports auto grade temperature and quality. G1 is cos...
125
8.0
Embedded flash IP, 1.5V/5V 130BCD Plus
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm . G1 is best fit embedded flash IP to BCD nodes and it can...
126
8.0
Embedded flash IP, 1.5V/5V 130nm
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm and supports auto grade temperature and quality. G1 is cos...
127
8.0
TSMC CLN12FFC Ternary Content Addressable Memory Compiler
IGMTLSV04A is a synchronous LVT / ULVT periphery high-density ternary content addressable memory (TCAM). It is developed with TSMC 12nm 0.8V/1.8V CMOS...
128
8.0
TSMC CLN16FFC Ternary Content Addressable Memory
IGMTLSLV02A is a synchronous LVT periphery high-density ternary content addressable memory (TCAM). It is developed with TSMC 16 nm 0.8 V/1.8 V CMOS LO...
129
8.0
TSMC CLN5FF Ternary Content Addressable Memory Compiler with Column Redundancy
IGMTLSY01A is a synchronous LVTLL / LVT / ULVT periphery high-density ternary content addressable memory (TCAM) with column redundancy feature. It is ...
130
8.0
TSMC CLN5FFP Pre-search and Pipeline Ternary Content Addressable Memory
IGMTLSY02A, TSMC CLN5FFP Pre-search and Pipeline Ternary Content Addressable Memory...
131
8.0
TSMC CLN6FF Asynchronous Read Two Port Register File Compiler
IGMDLRX01A is an asynchronous read and synchronous write ULVT periphery two port register file compiler (2PRF). It is developed with TSMC 6nm 0.75V/1....
132
8.0
TSMC CLN7FF Pre-search and Pipeline Ternary Content Addressable Memory Compiler
IGMTLSX04A is a synchronous LVT / ULVT periphery high-density pre-search and pipeline ternary content addressable memory (TCAM) with column redundancy...
133
5.0
Memory Compiler(12nm,16nm,22nm,28nm,40nm,55nm, 90nm, 115nm, 130nm, 150nm, 180nm)
M31 memory compilers are designed with high industrial standards to which provides the memory solutions for density, power, and performance optimizati...
134
4.0
Flash Memory LDPC
LDPC corrects errors caused by flash storage failure mechanisms. The data is encoded while writing into the storage devices and it is decoded while re...
135
3.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 90 nm LP - Non volatile memory optimized for low power - compiler range up to 1024 k...
136
3.0
Metal programmable ROM compiler - Memory optimized for low power and high density - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 152 nm LP - Non volatile memory optimized for low power and high density - compiler range up to 1024 k...
137
3.0
Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 152 nm G - Non volatile memory optimized for low power and high density - Dual Voltage - compiler range up to 1...
138
3.0
Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 180 nm G - Non volatile memory optimized for low power and high density - Dual Voltage - compiler range up to 1...
139
3.0
Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 180 nm eLL - Non volatile memory optimized for low power and high density - Dual Voltage - compiler range up to...
140
3.0
Single Port Register File compiler - Memory optimized for high density and high speed - compiler range up to 40 k
Single Port Register File compiler - TSMC 55 nm LP - Memory optimized for high density and high speed - compiler range up to 40 k...
141
3.0
Single Port Register File compiler - Memory optimized for high density and high speed - compiler range up to 40 k
Single Port Register File compiler - TSMC 65 nm LP - Memory optimized for high density and high speed - compiler range up to 40 k...
142
3.0
Single Port Register File compiler - Memory optimized for high density and high speed - compiler range up to 40 k
Foundry sponsored - Single Port Register File compiler - TSMC 90 nm LPeF - Memory optimized for high density and high speed - compiler range up to 40 ...
143
3.0
Single Port Register File compiler - Memory optimized for high density and speed - Dual Voltage - compiler range up to 40 k
Foundry sponsored - Single Port Register File compiler - TSMC 90 nm uLL - high density - Dual Voltage - compiler range up to 40 k...
144
3.0
Single Port Register File compiler - Memory optimized for high density and speed - Dual Voltage - Compiler range up to 40 kbits
Single Port Register File compiler - TSMC 90 nm uLL - Memory optimized for high density and speed - Dual Voltage - Compiler range up to 40 kbits...
145
3.0
Single Port Register File compiler - Memory optimized for ultra high density and high speed - compiler range up to 20 k
Foundry Sponsored - Single Port Register File compiler - TSMC 110 nm HV_1.5V_5V - Memory optimized for ultra high density and high speed - compiler ra...
146
3.0
Single Port Register File compiler - Memory optimized for ultra high density and high speed - compiler range up to 20 k
Single Port Register File compiler - TSMC 110 nm HV_1.5V_5V_32V - Memory optimized for ultra high density and high speed - compiler range up to 20 k...
147
3.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LPeF - Memory optimized for high density and Low power - compiler range up to 320 k...
148
3.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - TSMC 110 nm HV_1.5V_5V_32V - Memory optimized for high density and low power - compiler range up to 320 k...
149
3.0
Single Port SRAM compiler - Memory optimized for high density and speed - Dual Voltage - Compiler range up to 640 kbits
Single Port SRAM compiler - TSMC 90 nm uLL - Memory optimized for high density and speed - Dual Voltage - Compiler range up to 640 kbits...
150
3.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...